switches - chip 4 4 - 32 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc607 gaas mmic high isolation spdt switch, dc - 15 ghz features functional diagram general description the hmc607 is a broadband high isolation non- refl ective gaas mesfet spdt mmic chip. covering dc to 15 ghz, the switch features >55 db isolation at lower frequencies and >45 db at higher frequencies. the switch operates using complementary negative control voltage logic lines of -5/0v and requires no bias supply. high isolation: >50 db @ 10 ghz low insertion loss: 1.4 db typical @ 6.0 ghz non-refl ective design die size: 2.05 x 1.1 x 0.1 mm electrical specifi cations, t a = +25 c, with 0/-5v control, 50 ohm system typical applications the hmc607 is ideal for: ? telecom infrastructure ? microwave radio & vsat ? military radios, radar & ecm ? space systems ? test instrumentation parameter frequency min. typ. max. units insertion loss dc - 6 ghz dc - 10 ghz dc - 15 ghz 1.4 1.7 2.7 1.7 2.5 3.4 db db db isolation* dc - 6 ghz dc - 10 ghz dc - 15 ghz 55 50 45 65 60 55 db db db return loss on state dc - 6 ghz dc - 15 ghz 17 11 db db return loss rf1, rf2 off state dc - 6 ghz dc - 15 ghz 13 17 db db input power for 1 db compression 0.5 - 15 ghz 21 26 dbm input third order intercept (two-tone input power= +7 dbm each tone, 1 mhz tone separation) 0.5 - 15 ghz 44 49 dbm switching characteristics trise, tfall (10/90% rf) ton, toff (50% ctl to 10/90% rf) dc - 15 ghz 3 5 ns ns *isolation data taken with probe on the die v04.0809
switches - chip 4 4 - 33 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com input third order intercept point return loss 0.1 and 1 db input compression point insertion loss isolation* -5 -4 -3 -2 -1 0 03691215 +25 c +85 c -55 c insertion loss (db) frequency (ghz) -90 -75 -60 -45 -30 -15 0 03691215 rf1 rf2 isolation (db) frequency (ghz) -35 -25 -15 -5 02468101214 rfc rf1, rf2 on rf1, rf2 off return loss (db) frequency (ghz) 10 15 20 25 30 0246810121416 0.1 db compression point 1 db compression point compression point (dbm) frequency (ghz) 30 35 40 45 50 55 60 0246810121416 +25 c +85 c -55 c ip3 (dbm) frequency (ghz) hmc607 gaas mmic high isolation spdt switch, dc - 15 ghz v04.0809 *isolation data taken with probe on the die
switches - chip 4 4 - 34 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com truth table absolute maximum ratings control voltages state bias condition low 0 to -0.2v @ 10 ua max. high -5v @ 10 ua typ. to -7v @ 45 ua typ. rf input power (a, a, b, b = 0/-5v) (0.5 - 6 ghz) +30 dbm (@ +50 c) control voltage range (a, a, b, b) +1v to -7.5 vdc channel temperature 150 c thermal resistance (r th ) (junction to lead) 94 c/w storage temperature -65 to +150 c operating temperature -55 to +85 c electrostatic sensitive device observe handling precautions hmc607 gaas mmic high isolation spdt switch, dc - 15 ghz v04.0809 suggested driver circuit for single line control control input signal path state b b a a rfc to rf1 rfc to rf2 low high low high on off high low high low off on high low low high off off low high high low on on caution: do not hot switch power levels greater than +27 dbm ( a, a, b, b = 0/-5v ).
switches - chip 4 4 - 35 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com pad number function description interface schematic 1, 4, 7 rf1, rfc, rf2 this pin is dc coupled and matched to 50 ohm. blocking capacitors are required if rf line potential is not equal to 0v. 2, 10 b see truth table and control voltage table. alternate a & b control pads provided. 3, 11 b 5, 8 a 6, 9 a die bottom gnd die bottom must be connected to rf ground. outline drawing notes: 1. all dimensions are in inches [mm] 2. die thickness is .004 3. typical bond pad is .004 square 4. backside metalization: gold 5. backside metal is ground 6. bond pad metalization: gold 7. no connection required for unlabled bond pads. 8. overall die size .002 pad descriptions hmc607 gaas mmic high isolation spdt switch, dc - 15 ghz v04.0809 die packaging information [1] standard alternate wp-17 (waffle pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation.
switches - chip 4 4 - 36 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc607 gaas mmic high isolation spdt switch, dc - 15 ghz v04.0809 assembly diagram
switches - chip 4 4 - 37 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc607 gaas mmic high isolation spdt switch, dc - 15 ghz v04.0809 mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm (3 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fl at. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire (dc bias, if1 and if2) or ribbon bond (rf and lo ports) 0.076 mm x 0.013 mm (3 mil x 0.5 mil) size is recommended. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. use the minimum level of ultra - sonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate . all bonds should be as short as possible <0.31 mm (12 mils). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1.
|
